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2SK3760
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSY )
2SK3760
unit*F**
Switching Regulator Applications
3.84*} .2 0
3.84*}0.2
10.5 max 10.5 max
4.7 max 4.7max
1.3 6.6 max
6.6 max.
1.3
* * * *
Low drain-source ON resistance: R DS (ON) = 1.7 (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low leakage current: IDSS = 100 E (V DS = 600 V) A Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)
13.4 min 13.4 min.
3.9 max
3.9 max.
Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current (Note 1) Symbol V DSS V DGR V GSS ID IDP PD EA S IAR EAR Tch Tstg Pulse (t = 1 ms) (Note 1) Rating 600 600 30 3.5 14 60 6.3 3.5 6 150 -55~150 W mJ A mJ C C Unit V V V A
15.6 max. 15.6 max
2.7
1.5max 1.5 max 0.81 max 0.81 0.45
0.45
2.7
2.54 2.54 2.7
1
2
3
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
1. 2. 3.
Gate Drain(HEAT SINK) Source
JEDEC JEITA TOSHIBA
TO-220AB SC-46
*\
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.08 83.3 Unit C/W C/W
Weight : 2.0g(typ.)
2
Note 1: Please use devices on conditions that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C(initial), L = 0.9 mH, IAR = 3.5 A, RG = 25 Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution.
3 1
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2SK3760
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd V DD 400 V, V GS = 10 V, ID = 3.5 A - Duty < 1%, tw = 10 s = Symbol IGSS V (BR) GSS IDSS V (BR) DSS V th RDS (ON) Yf s Ciss Crss Coss tr ton 10 V V GS 0V 50 ID = 1.8 A V OUT RL = 111 V DD 200 V - V DS = 25 V, V GS = 0 V, f = 1 MHz Test Condition V GS = 25 V, V DS = 0 V ID = 10 A, V GS = 0 V V DS = 600 V, V GS = 0 V ID = 10 mA, V GS = 0 V V DS = 10 V, ID = 1 mA V GS = 10 V, ID = 1.8 A V DS = 10 V, ID = 1.8 A Min 30 600 2.0 0.7 Typ. 1.7 2.5 550 6 60 12 45 13 80 16 10 6 Max 10 100 4.0 2.2 pF Unit A V A V V S

ns

nC
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP V DSF trr Qrr Test Condition IDR = 3.5 A, V GS = 0 V IDR = 3.5 A, V GS = 0 V, dIDR /dt = 100 A/s Min Typ. 1400 9 Max 3.5 14 -1.7 Unit A A V ns C
Marking
*|
*| Lot Number TYPE Date Month (Starting from Alphabet A) Year (Last Number of the Christian Era)
K3760
2
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2SK3760
ID - V DS
2 COMMON SOURCE Tc = 25C PULSE TEST 15,10 8 6 5.5 5 5 15,10
ID - V DS
6
DRAIN CURRENT D (A) I
DRAIN CURRENT D (A) I
8 4
5.5
1.6
4.8 1.2
3
COMMON SOURCE Tc = 25C PULSE TEST 5
4.6 0.8 4.4 0.4 4.2 VGS = 4V 0 0 1 2 3 4 5
2
1
4.5 VGS = 4 V
0 0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS
(V)
DRAIN-SOURCE VOLTAGE VDS
(V)
ID - V GS DRAIN-SOURCE VOLTAGE VDS (V)
4 COMMON SOURCE 20
V DS - V GS
COMMON SOURCE Tc = 25*Z 16 PULSE TEST
DRAIN CURRENT D (A) I
VDS = 10 V 3 PULSE TEST
12
2
8
ID = 3.5 A
Tc = -55C 1 100 25 0 0
4
1.8
1 0 0 4 8 12 16
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS
(V)
GATE-SOURCE VOLTAGE VGS
(V)
Yf s - ID FORWARD TRANSFER ADMITTANCE Yf s (S)
10 10
RDS (ON) - ID DRAIN-SOURCE ON RESISTANCE RDS (ON) ()
COMMON SOURCE Tc = 25C PULSE TEST
Tc = -55C 25 100 1
VGS = 10 V15V
COMMON SOURCE VDS = 20 V 0.1 0.1 PULSE TEST 1 10
1 0.1
1
10
DRAIN CURRENT D (A) I
DRAIN CURRENT D (A) I
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2SK3760
RDS (ON) - Tc
10 100 COMMON SOURCE 8
IDR - V DS
COMMON SOURCE Tc = 25C PULSE TEST 10
DRAIN-SOURCE ON RESISTANCE RDS (ON) ( )
6 ID = 3.5A 4 1.8
DRAIN REVERSE CURRENT IDR (A)
VGS = 10 V PULSE TEST
1
2
1
10 5 3 -0.4 1 -0.6 VGS = 0, -1 V -0.8 -1.0 -1.2
0 -80
-40
0
40
80
120
160
0.1 0
-0.2
CASE TEMPERATURE Tc ( C)
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE - V DS
10000 5
V th - T c
GATE THRESHOLD VOLTAGE V th (V)
CAPACITANCE C (pF)
1000
Ciss
4
3
100
Coss
2 COMMON SOURCE 1 VDS = 10 V ID = 1 mA PULSE TEST 0 -80 -40 0 40 80 120 160
10
COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C
Crss
1 0.1
1
10
100
DRAIN-SOURCE VOLTAGE VDS (V)
CASE TEMPERATURE Tc ( C)
PD - Tc DRAIN-SOURCE VOLTAGE VDS (V)
80 500
DYNAMIC INPUT / OUTPUT CHARACTERISTICS GATE-SOURCE VOLTAGE VGS (V)
20
DRAIN POWER DISSIPATION PD (W)
400
60
VDS VDD = 100 V
16
300 200 200 400 COMMON SOURCE VGS 100 ID = 3.5 A Tc = 25C PULSE TEST 0 0 5 10 15 20
12
40
8
20
4
0 0 40 80 120 160
0 25
CASE TEMPERATURE Tc (C)
TOTAL GATE CHARGE Q (nC) g
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2SK3760
r th - tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c)
10
1 Duty=0.5 0.2 0.1 0.1 0.02 0.01 0.05 T Duty = t/T Rth (ch-c) = 2.08C/W 0.01 10E 100E 1* 10* 100* 1 10 SINGLE PULSE PDM t
PULSE WIDTH tw (s)
SAFE OPERATING AREA
100 8
EA S - Tch
ID max ( PULSED) *
AVALANCHE ENERGY EA S (mJ)
6
DRAIN CURRENT D (A) I
10 ID max ( CONTINUOUS) * 1 ms * 1 DC OPERATION Tc = 25C
100 s *
4
2
*|SINGLE NONREPETITIVE PULSE
0.1
CURVES Tc=25*Z MUST BE DERATED
0 25
50
75
100
125
150
LINEARLY WITH INCREASE IN TEMPERATURE.
CHANNEL TEMPERATURE (INITIAL) Tch (C)
VDSS max 100 1000
0.01 1
10
15 V DRAIN-SOURCE VOLTAGE VDS (V) -15 V
BVDSS IAR V DD V DS
TEST CIRCUIT RG = 25 V DD = 90 V, L = 0.9 mH
WAVE FORM A AS = 1 BVDSS L I2 B 2 - VDD VDSS
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assum ed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments , all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
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